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de l’Universite de Nantes. University of Strathclyde, Campus. Rashford, University of Glasgow, Glasgow.The present invention relates generally to a semiconductor device and a method of fabricating the same, and more particularly, to a semiconductor device and a method of fabricating the same capable of preventing a short channel effect by forming a recess in a source/drain of a cell region and a peripheral region, the recess being filled with a dielectric material, for lowering a resistance of the source/drain, and increasing a channel width.
A width of a gate is restricted according to a line width of a lithographic process in a conventional semiconductor device. Accordingly, an increase in integration density of the conventional semiconductor device causes a reduction of an area of a channel width, thereby resulting in a short channel effect. The short channel effect deteriorates a driving current and a reliability of the semiconductor device. Accordingly, various studies have been conducted to form an effective channel width, which is greater than a line width of a conventional lithographic process, in a cell region and a peripheral region.
Since a conventional semiconductor device has a predetermined cell region and a predetermined peripheral region, it has a problem in that the semiconductor device includes an area that does not contribute to a driving operation of the semiconductor device.
In particular, the semiconductor device includes a contact plug for connecting a gate, a source or a drain to an interconnection line. Therefore, an area excluding a channel of the semiconductor device increases, so that the conventional semiconductor device has a problem of a decrease in a driving current and a degradation in a reliability.
To avoid the above problems, an area that does not contribute to a driving operation of the semiconductor device needs to be reduced. However, in the conventional art, the area of the semiconductor device that does not contribute to the driving operation is necessary for an effective channel of the semiconductor device.[The identification of the specific factor and the evaluation of its role in the development of endotoxemia].
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